'Oxygen tunnel' structure could solve 3D memory reliability problem to boost AI chip performance

Дата публикации: 19-08-2026 15:20:05

As AI systems become more advanced, memory is required to transfer larger amounts of data at higher speeds. But conventional planar semiconductor scaling is running out of room. A KAIST research team has now addressed a key weakness in three-dimensional, vertically stacked memory devices, opening a new path to faster, more power-efficient AI semiconductors.

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