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eGaN transistors for power conversion in space-based computing systems

Дата публикации: 20-08-2026 05:01:28

EPC (Efficient Power Conversion) Space has come up with three new eGaN power transistors in plastic surface-mount packages, designed to deliver high-performance power conversion for space computing systems. The EPC7050PCSH, […]
The post eGaN transistors for power conversion in space-based computing systems appeared first on Electronics Weekly.


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EPC eGaN space

EPC (Efficient Power Conversion) Space has come up with three new eGaN power transistors in plastic surface-mount packages, designed to deliver high-performance power conversion for space computing systems.

The EPC7050PCSH, EPC7066PCSH and EPC7065PCSH combine ultra-low on-resistance, high current capability and fast switching performance in compact PQFN packages with backside thermal pads.

Their low conduction losses and  world-class switching figures of merit enable high efficiency and power density, all with zero reverse-recovery charge.

Together, these characteristics enable smaller, more efficient power conversion solutions for space-constrained architectures.

All three offer exceptional radiation immunity: TID > 1 Mrad, SEE LET(Si) 85 MeV cm2/mg, and neutron > 4E15 n/cm2.

The EPC7050PCSH is a 15V device with 101A continuous current capability and typical RDS(on)of 0.28mΩ. The EPC7066PCSH is rated at 25V and 101A, with typical RDS(on) of 0.37 mΩ, while the EPC7065PCSH provides a 40V rating, 101A continuous current capability and typical RDS(on)of 0.5mΩ.

All three products are designed for synchronous rectifier applications on the secondary side of intermediate bus converters with output in the range of 5V-12V, delivering an industry-leading low RDS(on) × QG figure of merit to enable higher-frequency and higher-efficiency operation.

The devices also  target point-of-load buck converters/IVRs supplying 0.8V core voltage for the processor.

“These devices target voltage regulator module (VRM), intermediate voltage regulation (IVR), point-of-load (POL) and intermediate bus converter (IBC) applications to power space compute assets such as the Versal SoC or Nvidia GPUs,” said Bel Lazar, CEO of EPC Space. “They exhibit exceptional radiation hardness, including TID immunity and robustness to neutron and single-event effects, while offering electrical performance superior to the best silicon mosfets operating on the ground today.”

As AI and high-performance computing extend into space, the ability to deliver reliable power to increasingly demanding processors and accelerators is becoming a critical part of system design.

EPC Space’s latest eGaN devices address this challenge by combining radiation robustness with the electrical performance and power density required by next-generation space compute platforms.

For 500-unit quantities engineering models are priced at $85.00, and rad-hard space qualified are priced at $125.00.

Related news – Mouser signs EPC

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David Manners

David Manners has more than forty-years experience writing about the electronics industry, its major trends and leading players. As well as writing business, components and research news, he is the author of the site's most popular blog, Mannerisms. This features series of posts such as Fables, Markets, Shenanigans, and Memory Lanes, across a wide range of topics.

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