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Study of the Thermoelastic Effect in GaN

Дата публикации: 13-08-2026 22:00:00

Publication date: 14 August 2026
Source: Key Engineering Materials Vol. 1062
Author(s): Iva Tkalcec-Vaju, Nicolas Grandjean, Daniele Mari
Young’s modulus and internal friction of bulk GaN single crystal samples were measured as a function of temperature in 100 K to 700 K range. The internal friction strongly depends on sample dimensions and measurement frequency (3 – 10 kHz). The experimental values are compared to the theoretical model for thermoelastic damping. The model and the experimental data match very well in the whole temperature range and for different frequencies indicating that the thermoelastic damping is the main energy dissipation mechanism.


Основное содержимое страницы с новостью.

[1] C. Zener, Internal friction in solids II. General theory of thermoelastic internal friction, Physical review 53, 1 (1938) 90-99.

DOI: 10.1103/physrev.53.90

Google Scholar

[2] B. Berry, Precise investigation of the theory of damping by transverse thermal currents, Journal of Applied Physics 26, (1955) 1221-1224.

DOI: 10.1063/1.1721877

Google Scholar

[3] B. Vittoz, B. Secrétan, B. Martinet, Frottement interne et anélasticité des solides, Zeitschrift für angewandte Mathematik und Physik ZAMP, 14(1) (1963) 46-69.

DOI: 10.1007/bf01601145

Google Scholar

[4] C. Roder, S. Einfeldt, S. Figge, D. Hommel, Temperature dependence of the thermal expansion of GaN, Physical Review B 72.8 (2005) 085218.

DOI: 10.1103/physrevb.72.085218

Google Scholar

[5] B.A. Danilchenko, T. Paszkiewicz, S. Wolski, A. Jeżowski, T. Plackowski. Heat capacity and phonon mean free path of wurtzite GaN, Applied physics letters 89.6 (2006).

DOI: 10.1063/1.2335373

Google Scholar

[6] Q. Zheng, C. Li, A. Rai, J.H. Leach, D.A. Broido, D.G. Cahill, Thermal conductivity of GaN, GaN 71, and SiC from 150 K to 850 K, Physical Review Materials 3, no. 1 (2019) 014601.

DOI: 10.1103/physrevmaterials.3.014601

Google Scholar

[7] C. H. Tsai, S.R. Jian, J.Y. Juang, Berkovich nanoindentation and deformation mechanisms in GaN thin films, Applied Surface Science, 254.7 (2008) 1997-2002.

DOI: 10.1016/j.apsusc.2007.08.022

Google Scholar

[8] S. Reid, G. Cagnoli, D. R. M. Crooks, J. Hough, P. Murray, S. Rowan, M.M. Fejer, R. Route, S. Zappe, Mechanical dissipation in silicon flexures, Physics letters A 351.4-5 (2006) 205-211.

DOI: 10.1016/j.physleta.2005.10.103

Google Scholar

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